Carrier recombination parameters in diamond after surface boron implantation and annealing

On effective surface recombination parameters

Enhancement of Surface Hardness: Boron on Diamond (111)

We have performed ab initio pseudopotential calculations for the diamond (111) surface with nitrogen or boron replacing the surface carbon atoms. Surface boron atoms form planar sp2 bonds with carbon atoms and the compressive stress from the underlying bulk diamond lattice squeezes the B-C bonds significantly. Bulk and shear moduli in the surface region increase substantially, surpassing those ...

Superconductivity in boron-doped diamond.

Superconductivity of boron-doped diamond, reported recently at T(c)=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond-stretch mode is 60% larger than the corresponding quantity in MgB2 that drives its high T(c), leading to very large electron-phonon matrix elements. The calculated coupling str...

Boron in Diamond on Isotopic Mass

Kim et al. have reported a dependence of the infrared excitation energies of boron acceptors in diamond on the isotopic mass of the carbon atoms. We show that this change can be quantitatively interpreted as induced by a change in the hole effective mass.

Low Temperature Annealing of Polycrystalline Si1-xGex after Dopant Implantation

Hall Effect measurement was employed to study the isothermal annealing of boron or phosphorus implanted polycrystalline Si1-xGex thin films, with x varying from 0.3 to 0.55. Xray diffraction and cross-sectional transmission electron microscopy were used to study the crystal structure, while X-ray photoelectron spectroscopy was used to determine the film composition and the chemical bonding stat...